A quantum leap in the development of new materials and devicesHANAK, Joseph J.Applied surface science. 2004, Vol 223, Num 1-3, pp 1-8, issn 0169-4332, 8 p.Conference Paper

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configurationLAUZURICA, S; GARCIA-BALLESTEROS, J. J; COLINA, M et al.Applied surface science. 2011, Vol 257, Num 12, pp 5230-5236, issn 0169-4332, 7 p.Conference Paper

Thermal dehydrogenation of amorphous silicon: A time-evolution studyDE CALHEIROS VELOZO, A; LAVAREDA, G; NUNES DE CARVALHO, C et al.Thin solid films. 2013, Vol 543, pp 48-50, issn 0040-6090, 3 p.Conference Paper

Light-induced defect generation of a-Si: H at below-room-temperaturePARK, H.-R.Solid state communications. 1994, Vol 91, Num 2, pp 153-156, issn 0038-1098Article

Two dimensional image sensors based on amorphous silicon alloy p-i-n diodesDE CESARE, G; DI ROSA, P; LA MONICA, S et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 789-792, issn 0022-3093, 2Conference Paper

Surface diffusion of SiH₃ radicals and growth mechanism of a-Si:H and microcrystalline SiDEWARRAT, R; ROBERTSON, J.Thin solid films. 2003, Vol 427, Num 1-2, pp 11-15, issn 0040-6090, 5 p.Conference Paper

Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturizationKEGEL, Jan; ANGERMANN, Heike; STÜRZEBECHER, Uta et al.Applied surface science. 2014, Vol 301, pp 56-62, issn 0169-4332, 7 p.Conference Paper

Performances of amorphous silicon and silicon germanium semi-transparent solar cellsJUNG WOOK LIM; SEONG HYUN LEE; DA JUNG LEE et al.Thin solid films. 2013, Vol 547, pp 212-215, issn 0040-6090, 4 p.Conference Paper

Hot-wire CVD amorphous Si materials for solar cell applicationQI WANG.Thin solid films. 2009, Vol 517, Num 12, pp 3570-3574, issn 0040-6090, 5 p.Conference Paper

A modelling and multiobjective optimisation study of the light induced degradation parameters influencing the variation of distribution of annealing activation energies in a-Si:HYENIAY, Özgür; KODOLBAS, Alp Osman.Computational materials science. 2005, Vol 32, Num 2, pp 217-222, issn 0927-0256, 6 p.Article

The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cellsLEE, Seung-Yoon; SHIM, Jenny H; DONG JOO YOU et al.Solar energy materials and solar cells. 2011, Vol 95, Num 1, pp 142-145, issn 0927-0248, 4 p.Conference Paper

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWANG, M. C; TSAO, S. W; CHANG, T. C et al.Solid-state electronics. 2010, Vol 54, Num 11, pp 1485-1487, issn 0038-1101, 3 p.Article

Enhanced infrared response of ultra thin amorphous silicon photosensitive devices with Ag nanoparticlesLUO, P. Q; MOULIN, E; SUKMANOWSKI, J et al.Thin solid films. 2009, Vol 517, Num 23, pp 6256-6259, issn 0040-6090, 4 p.Conference Paper

Dispersion model for optical constants of a―Si:HJIAN HE; RUI XU; WEI LI et al.Physica. B, Condensed matter. 2013, Vol 431, pp 120-126, issn 0921-4526, 7 p.Article

Drain bias dependent bias temperature stress instability in a-Si:H TFTTANG, Z; PARK, M. S; JIN, S. H et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 225-233, issn 0038-1101, 9 p.Article

Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVDJIAN HE; CHONG WANG; WEI LI et al.Surface & coatings technology. 2013, Vol 214, pp 131-137, issn 0257-8972, 7 p.Article

The effect of original crystalline phase on solid phase crystallization of hydrogenated silicon thin filmsWANG, T; ZHANG, M; WANG, H et al.Applied surface science. 2013, Vol 284, pp 588-594, issn 0169-4332, 7 p.Article

Correlation between the improved stability and low temperature hydrogen effusion in hydrogenated amorphous silicon films grown from hydrogen dilution of silaneYOON, Jong-Hwan.Solid state communications. 2002, Vol 124, Num 8, pp 289-292, issn 0038-1098, 4 p.Article

Surface states on amorphous siliconWEISZ, S. Z; AVALOS, J; GOMEZ, M et al.Surface science. 1995, Vol 338, Num 1-3, pp 117-124, issn 0039-6028Article

The concept of transport energy and its application to steady-state photoconductivity in amorphous siliconBARANOVSKII, S. D; THOMAS, P; ADRIAENSSENS, G. J et al.Journal of non-crystalline solids. 1995, Vol 190, Num 3, pp 283-287, issn 0022-3093Article

Oscillations of the photoconductivity and characteristic features of the relaxation kinetics of a-Si:HBUDAGYAN, B. G; AIVAZOV, A. A; STANOVOV, O. N et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 822-825, issn 1063-7826Article

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Theoretical analysis and experimental results on the modulated photocarrier grating techniqueSCHMIDT, J. A; BUDINI, N; VENTOSINOS, F et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 3, pp 556-560, issn 1862-6300, 5 p.Conference Paper

Hindering the light-induced instability in a-Si:H by hydrogen clustersYOON, Jong-Hwan.Journal of non-crystalline solids. 2000, Vol 266-69, pp 455-458, issn 0022-3093, 4 p., aConference Paper

Deconvolution of ESR spectra and their light-induced effect in a-Si:HHIKITA, H; TAKEDA, K; KIMURA, Y et al.Journal of the Physical Society of Japan. 1997, Vol 66, Num 6, pp 1730-1740, issn 0031-9015Article